| GaAs(100)表面硫钝化的新方法:CH3CSNH2/NH4OH处理 |
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| 引用本文： | 陆尔东,徐彭寿,余小江,徐世红,潘海斌,张新夷.GaAs(100)表面硫钝化的新方法:CH3CSNH2/NH4OH处理[J].物理学报,1996,45(4):715-720. |
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| 作者姓名： | 陆尔东 徐彭寿 余小江 徐世红 潘海斌 张新夷 |
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| 作者单位： | 中国科学技术大学国家同步辐射实验室,合肥230026 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | 建立了一种硫钝化GaAs(100)表面的新方法,即CH3CSNH2/NH4OH溶液处理,应用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)表征了该钝化液处理的n-GaAs(100)表面的成键,特性和电子态.结果表明,经过处理的n-GaAs(100)表面,S既与As成键也与Ga成键,形成S与GaAs的新界面,并且Ga和As的氧化物被移走,这标志着CH3CSNH2/NH4关键词：
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| 关 键 词： | 砷化镓 硫钝化 钝化液处理 |
| 收稿时间： | 1994-12-22 |
A NEW METHOD:CH3CSNH2/NH4OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION |
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| LU ER-DONG,XU PENG-SHOU,YU XIAO-JIANG,XU SHI-HONG,PAN HAI-BIN and ZHANG XIN-YI.A NEW METHOD:CH3CSNH2/NH4OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION[J].Acta Physica Sinica,1996,45(4):715-720. |
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| Authors: | LU ER-DONG XU PENG-SHOU YU XIAO-JIANG XU SHI-HONG PAN HAI-BIN and ZHANG XIN-YI |
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| Abstract: | We have developed a new method to treat GaAs (100) surface by CH3CSNH2/NH4OH solution Synchrotron Radiation Photoemission Spectroscopy (SRPES) and X-ray Photoemission Spectroscopy (XPS) have been used to investigate the chemical states and electronic states of the passivated GaAs (100) surface. The results show that the sulfides of Ga and As were formed on CH3CSNH2/NH4OH solution treated GaAs(100) surface . and the oxides of Ga and As were removed . The treatment has an apparently passivating role for the GaAs. After annealing for the passivated surface , band bending effect was observed and the offset of 0.22 eV toward the higher binding energy was obtained this meant that the densenty of the states of GaAs surface was decreased. |
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