| La掺杂BaTiO3陶瓷的介电性与缺陷 |
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| 引用本文： | 唐超群,喻力华.La掺杂BaTiO3陶瓷的介电性与缺陷[J].物理学报,1996,45(7):1220-1224. |
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| 作者姓名： | 唐超群 喻力华 |
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| 作者单位： | 华中理工大学物理系,武汉430074;华中理工大学物理系,武汉430074 |
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| 摘 要： | La掺杂BaTiO3陶瓷的介电常数在0.40at％La含量内随掺La量呈现倒U型变化,在1kHz内随频率增加急剧减小,之后随频率变化缓慢,介电性的这些变化起因于掺La引起的如下缺陷变化:独立的Ba空位( V″Ba→(LaBa·V″Ba)型复合缺陷→(LaBa·V″Ba·LaBa型复合缺陷型复合缺陷。
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| 关 键 词： | 钛酸钡 镧掺杂 陶瓷半导体 介电性 缺陷 |
| 收稿时间： | 1994-12-09 |
THE DIELECTRIC PROPERTY AND DEFECTS OF La-DOPED BaTiO3 CERAMICS |
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| TANG CHAO-QUN and YU LI-HUA.THE DIELECTRIC PROPERTY AND DEFECTS OF La-DOPED BaTiO3 CERAMICS[J].Acta Physica Sinica,1996,45(7):1220-1224. |
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| Authors: | TANG CHAO-QUN and YU LI-HUA |
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| Abstract: | The dielectric permittivity of La-doped BaTiO3 ceramics exhibits reverse U-shape variation with increasing La-content in the range of 0.4 at% La, and with increasing frequency f it decreases quickly for f≤1000 Hz and changes very slowly for f>1000 Hz. These variations of dielectric property result from variation of defects due to doping La as follows: isolated Ba-vacancy ( V″Ba)→ associated defect (LaBa·V″Ba)→(LaBa·V″Ba·LaBa). |
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