金属氧化物薄膜的多离子束反应共溅射模型(Ⅰ)——模型建立

针对作者发明的多离子束反应共溅射技术,基于气体动力学原理,在稳恒溅射情况下,建立了多离子束多靶反应共溅射的基本模型,获得了薄膜沉积速率和薄膜成分与反应共溅射工艺参数之间的关系.该模型揭示了影响薄膜成分的本质参量.基于该模型,提出了调控溅射速率及薄膜成分的途径与方法. 关键词：

MODELLING OF MULTI-ION-BEAM REACTIVE COSPUTTERING OF METAL OXIDE THIN FILMS (I)——ESTABLISHMENT OF THE MODEL

Reactive sputtering is a very useful technique for fabricating oxides and other compound thin films. Very recently, we developed a technique named multi-ion-beam reactive conputtering (MI-BRECS) for preparing multi-component metal oxide thin films. In order to promote the development of this technique, it is necessary to investigate the mechanisms of thin film growth of reactive cosputtering. Based on the well-known gas kinetics, we established a fundamental model of multi-ion beam, multi-target reactive cosputtering under stable sputtering circumstances, and obtained the relationships between both the deposition rate and composition of thin films and the controllable reactive cosputtering parameters. This model reveals the essential parameters that affect the composition of thin films and the methods for controlling the deposition rate and the composition of thin films can be obtained from the model.