金属氧化物薄膜的多离子束反应共溅射模型(Ⅱ)——数值计算与结果讨论

结合实验中的工艺技术参数,以Pb,Ti两金属靶的反应共溅射为例,对我们提出的金属氧化物薄膜的多离子束反应共溅射模型进行数值计算,分别得出了各靶的溅射速率R,反应腔中反应气体分压p以及衬底Pb,Ti的金属单质和氧化物所占的有效面积百分比与反应共溅射中直接可调的物理量,即反应气体总量Q和溅射离子束流J的关系.计算结果表明,该模型揭示了反应溅射具有滞回效应的本质特征,反映了反应共溅射中相关参数的相互影响与相互耦合的特点,给出了薄膜中组分原子百分比及其氧化物的形态与溅射工艺的关系,指出了多离子束反应共溅射中稳恒溅 关键词：

MODELLING OF MULTI-ION-BEAM REACTIVE COSPUTTERING OF METAL OXIDE THIN FILMS (Ⅱ)——NUMERICAL CALCULATION AND RESULTS DISCUSSION

The numerical calculation for the model of a multi-ion-beam reactive cosputtering (MI-BRECS) system which we presented very recently in a related paper has been carried out with the parameters adopted in our experiments to prepare PbTiO₃ thin films by using Pb and Ti metal targets and MIBRECS technique. The relationships among the sputtered ratio R_i of each target, the partial pressure p of reactive gas in the deposition chamber, and the coverage ratioes Z_smi, Z_sli, and Z_shi of the simple substances and oxide compounds of Pb and Ti on the substrate surface, with the total reactive gas flux Q and the densities J_i of the sputtering ion beam (both of which can be adjusted independently) are obtained respectively. The calculated results reveal the hysteresis effect which is an essential characteristics in a reactive sputtering, and show that there is a coupling and interaction among the processing parameters in ion beam reactive cosputtering. The relations among the atom ratio and the chemical valences of the elements in prepared thin films with the controllable processing parameters in ion beam reactive cosputtering are obtained, and the method to control and adjust a MIBRECS system for stable reactive cosputtering process is pointed out. The obtained results a-gree with our experiments.