| BaTiO3半导体陶瓷从PTC特性向边界层电容效应过渡问题探讨——晶界势垒模型的应用 |
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| 引用本文： | 郑振华,陈羽,缪容之.BaTiO3半导体陶瓷从PTC特性向边界层电容效应过渡问题探讨——晶界势垒模型的应用[J].物理学报,1996,45(9):1543-1550. |
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| 作者姓名： | 郑振华 陈羽 缪容之 |
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| 作者单位： | 宁波大学物理系;宁波大学物理系;宁波大学物理系 |
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| 基金项目： | 浙江省教育委员会资助的课题. |
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| 摘 要： | 对作者提出的晶界势垒模型作定量分析．由理论模型得到的结果定量解释了BaTiO3半导体陶瓷从ＰＴＣ特性向边界层电容效应过渡的有关现象；由此对BaTiO3半导体陶瓷边界层电容器和ＰＴＣ电阻器的性能作出了设计，设计值明显优于目前的实验值；对提高器件性能的方法作了探讨，提出了相应的措施．本文的结果为BaTiO3半导体陶瓷器件的设计、生产和性能提高提供了理论基础
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| 关 键 词： | 陶瓷半导体 PTC 边界层电容效应 钛酸钡 |
| 收稿时间： | 1995-01-23 |
ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL |
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| ZHENG YONG-MEI,CHEN YU and MIAO RONG-ZHI.ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL[J].Acta Physica Sinica,1996,45(9):1543-1550. |
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| Authors: | ZHENG YONG-MEI CHEN YU and MIAO RONG-ZHI |
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| Abstract: | The quantitative analyses for our proposed potential-barrier model are given in this paper. The results quantitatively explain how the semiconductiong BaTiO3 ceramics transforms from PTC effect to GBBL capacitor. The designs of PTC resistors and GBBL capacitors from this model are made, and the design properties are much better than that of present experimental data. The mathods improving the properties of relevant devices are discussed. The model provides a theoretical basis for the design, manufacture and property improvement of semiconducting BaTiO3 ceramic devices. |
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