| GaAs/AlGaAs多量子阱光生电压谱研究 |
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| 引用本文： | 朱文章,沈顗华. GaAs/AlGaAs多量子阱光生电压谱研究[J]. 物理学报, 1996, 45(2): 258-264 |
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| 作者姓名： | 朱文章 沈顗华 |
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| 作者单位： | (1)集美航海学院物理室,厦门361021; (2)厦门大学物理系,厦门361005 |
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| 基金项目： | 福建省自然科学基金资助的课题 |
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| 摘 要： | 在18—300K温度范围内,研究了用半绝缘体GaAs作为衬底的GaAs/AlGaAs多量子阱的光生电压谱.共观测到11H,11L,22H,22L,33H,33L,13H和31H等多种允许和禁戒的激子吸收峰.低温下的光生电压谱清晰地反映了多量子阱台阶式的状态密度分布.认为光生电压谱也可以作为一种判断多量子阱和超晶格外延生长质量的方法.还讨论了光生电压随温度的变化和光生电压效应的机理.关键词：
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| 关 键 词： | 砷化镓 铝镓砷 多量子阱 光生电压谱 |
| 收稿时间： | 1994-11-14 |
PHOTOVOLTAGE SPECTROSCOPY STUDY OF GaAs/AIGaAs MULTIPLE QUANTUM WELLS |
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| ZHU WEN-ZHANG and SHEN QI-HUA. PHOTOVOLTAGE SPECTROSCOPY STUDY OF GaAs/AIGaAs MULTIPLE QUANTUM WELLS[J]. Acta Physica Sinica, 1996, 45(2): 258-264 |
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| Authors: | ZHU WEN-ZHANG and SHEN QI-HUA |
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| Abstract: | The photovoltage spectra of GaAs/AlGaAs multiple quantum wells (QMWs) in which the substrates are semiinsultion GaAs have been studied at temperatures ranging from 18 to 300 K. A series of distinct excition absorption peaks were observed. At low temperature, the photovoltage spectra reflect the steplike distribution of state density of QMWs. It is believed that the photovoltage spectroscopy is an effective technique for inspecting the growing quanli-ty of QMWs and superlattice. The changes of photovoltage with temperature and the mechanism of photovoltaic effect are also discussed. |
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