| 金属-半导体超晶格中界面电荷的生成机理 |
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| 引用本文： | 李书平,王仁智.金属-半导体超晶格中界面电荷的生成机理[J].物理学报,2004,53(9):2925-2930. |
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| 作者姓名： | 李书平 王仁智 |
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| 作者单位： | 厦门大学物理学系，厦门 361005 |
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| 基金项目： | 国家重点基础研究发展规划（973）项目（批准号：001CB610505）、国家自然科学基金(批准号:90206030, 60376015, 10134030)、福建省自然科学基金资助的课题. |
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| 摘 要： | 采用LMTO ASA能带计算方法，研究(Si2)3 (2Al) 6 (001),(Ge2)3 (2Al) 6 (001),(Ge2)3 (2Au) 6 (001)和(Ge2)3 (2Ag) 6 (001)超晶格中半导体界面电荷Qss的生成机理，结
关键词：
Schottky势垒
界面电荷
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| 关 键 词： | Schottky势垒 界面电荷 |
| 文章编号： | 1000-3290/2004/53(09)/2925-06 |
| 收稿时间： | 2003-12-16 |
Formation mechanism of interface charges in the metal-semiconductor superlattices |
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| Li Shu-Ping and Wang Ren-Zhi.Formation mechanism of interface charges in the metal-semiconductor superlattices[J].Acta Physica Sinica,2004,53(9):2925-2930. |
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| Authors: | Li Shu-Ping and Wang Ren-Zhi |
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| Abstract: | The formation mechanism of the interface charge Q ss at the metal semiconductor interface in the (Si 2) 3(2Al) 6(001), (Ge 2) 3(2Al) 6(001),(Ge 2) 3(2Au) 6(001) and (Ge 2) 3(2Ag) 6(001) superlattices has been investigated by the LMTO ASA energy band calculation method. The results show that the origin of interface charge Q ss is the rearrangement of valence electrons in the metal and semiconductor atomic layers at the metal semiconductor interface. The formation mechanism of the interface charge Q ss in this paper is similar to that of Tung's model of the polarization of the chemical bonds at metal semiconductor interfaces. Both of them can account for the origin of interface charge Q ss even at the monocrystalline metal semiconductor interfaces. |
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| Keywords: | Schottky barrier interface charge |
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