| 变温退火制备铝诱导大晶粒多晶硅薄膜的机理研究 |
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| 引用本文： | 唐正霞,沈鸿烈,江丰,方茹,鲁林峰,黄海宾,蔡红.变温退火制备铝诱导大晶粒多晶硅薄膜的机理研究[J].物理学报,2010,59(12):8770-8775. |
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| 作者姓名： | 唐正霞 沈鸿烈 江丰 方茹 鲁林峰 黄海宾 蔡红 |
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| 作者单位： | 南京航空航天大学材料科学与技术学院,南京 210016 |
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| 基金项目： | 国家高技术研究发展计划(批准号:2006AA03Z219)和南京航空航天大学博士学位论文创新与创优基金(批准号:BCXJ08-10)资助的课题. |
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| 摘 要： | 为了缩短铝诱导法制备大晶粒多晶硅薄膜的退火时间,用射频磁控溅射法在玻璃衬底上沉积了a-Si/SiO2/Al叠层膜,并用两种方法进行变温退火.分析了变温退火工艺对铝诱导晶化过程的影响,着重讨论了退火过程中温度由低温升到高温时不形成小晶粒的机理和条件.研究表明,当退火温度升高时,是否形成小晶粒取决于晶粒半径、耗尽层厚度和相邻晶粒间距三者之间的关系.
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| 关 键 词： | 薄膜 多晶硅 铝诱导晶化 变温退火 |
| 收稿时间： | 1/7/2010 12:00:00 AM |
Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile |
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| Tang Zheng-Xia,Shen Hong-Lie,Jiang Feng,Fang Ru,Lu Lin-Feng,Huang Hai-Bin,Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile[J].Acta Physica Sinica,2010,59(12):8770-8775. |
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| Authors: | Tang Zheng-Xia Shen Hong-Lie Jiang Feng Fang Ru Lu Lin-Feng Huang Hai-Bin Cai Hong |
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| Institution: | College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China |
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| Abstract: | In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization, the stack of a-Si/SiO2/Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles. The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases. It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature, the distance of depletion region, and the distance of adjacent grains. |
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| Keywords: | thin film polycrystalline silicon aluminum induced crystallization temperature profile annealing |
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