首页 | 本学科首页   官方微博 | 高级检索  
     检索      

ZnO纳米线双绝缘层结构电致发光器件制备及特性研究
引用本文:常艳玲,张琦锋,孙晖,吴锦雷.ZnO纳米线双绝缘层结构电致发光器件制备及特性研究[J].物理学报,2007,56(4):2399-2404.
作者姓名:常艳玲  张琦锋  孙晖  吴锦雷
作者单位:北京大学信息科学技术学院,纳米器件物理与化学教育部重点实验室,北京,100871
基金项目:国家重点基础研究发展计划(973计划);国家自然科学基金;北京市自然科学基金
摘    要:在利用液相法生长ZnO纳米线薄膜的基础上,构造成功基于ZnO纳米线双绝缘层结构的交流电致发光器件.此器件呈现出良好的阻容特性,在室温下以一定频率的交流电压驱动,可观察到近紫外波段387 nm处和可见光波段552 nm处的发射谱带.从阻容结构的导电特性及ZnO纳米线材料的能带结构等方面探讨了这种器件的电致发光机理及频率特性.

关 键 词:纳米线  电致发光
文章编号:1000-3290/2007/56(04)/2399-06
修稿时间:06 27 2006 12:00AM

Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure
Chang Yan-Ling,Zhang Qi-Feng,Sun Hui,Wu Jin-Lei.Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure[J].Acta Physica Sinica,2007,56(4):2399-2404.
Authors:Chang Yan-Ling  Zhang Qi-Feng  Sun Hui  Wu Jin-Lei
Institution:Key Laboratory for the Physics and Chemistry of Nanodevices of Ministry of Education, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China
Abstract:ZnO nanowire thin film was prepared by chemical solution method and a ZnO nanowire-based electroluminescence device has been successfully developed. The device was driven by the alternating current and presented a good RC behavior. Under the action of applied bias, light emission in the ultraviolet region with the wavelength of 387 nm and in the visible region with 552 nm has been observed. The mechanism of electroluminescence and its frequency dependence are discussed in this paper by analyzing the electric properties of the device and the structure of energy band of ZnO semiconductor.
Keywords:ZnO
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号