一维缺陷光子晶体温度的测量

采用Si和SiO₂两种介质材料构造一维缺陷光子晶体，缺陷层介质为Si，利用传输矩阵法对带有缺陷的一维光子晶体的传光特性进行了理论分析，并得到其带隙特性.由于缺陷的存在，使得光子晶体的透射谱中产生缺陷峰.当被测温度变化时，根据两种介质的热光效应和热膨胀效应，光子晶体介质和缺陷层的光学厚度和折射率发生变化，透射谱缺陷峰产生漂移，由缺陷峰的中心波长漂移量得到被测温度的大小.构建了一维缺陷光子晶体测量温度的实验系统，实验结果表明缺陷峰中心波长与光子晶体所受的温度呈线性关系，测量灵敏度为0—2 关键词： 温度测量 一维光子晶体 传输矩阵法 缺陷峰

Temperature measurement with one dimensional defect photonic crystal

Si and SiO₂ were used as materials to build the one-dimension (1D) defect photonic crystal and the medium of detect layer is Si. Using transfer matrix method, the optical transmission properties in 1D defect photonic crystals was analyzed, and the band gap property of 1D photonic crystal was obtained. Because of the defect, the defect peak appears in the transmission spectra. According to thermo-optical effect and thermal-expansion effect the optical depth and index of the materials and the defect of photonic crystal vary when the temperature changes. So the temperature can be measured by the wavelength shift value of the defect peak. Using 1D defect photonic crystal an experimentation system was set up for temperature measurement. The result showed that there is a linear relationship between the temperature of photonic crystal and the wave-length of the peak. And the sensitivity of this measuring system is 0207nm/℃ and the measurement range is -20—120℃.