掺饵氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiO_{x∶H)，离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和 1.76时，分别对应77Ｋ和室温测量时最强的1.54μm光致发光.从15到250Ｋ的变温实验显示 出三个不同的强度与温度变化关系，表明氢化非晶氧化硅中铒离子的能量激发和发光是一个 复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区，并对实验现象进行了解 释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250Ｋ，光致发光强度减弱约1/2. 关键词： 铒 光致发光 氧含量}

PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS SiOx(0

Hydrogenated amorphous SiO_x films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77K and room temperature (RT) , respectively. We observed the strong PL at 1.54μm at RT. The 1.54μm PL inten sity changes with the variation of concentration of oxygen. The most intense PL at 77K in a-SiO_x∶H (Er) corresponds to O/Si=1.0 and at RT to O/Si=1. 76. Based on our results, we propose that Er ions contributed to PL come from O- rich region in the film. Er ions in Si-rich region have no relation with PL. Tem perature dependence of the intensity of the 1.54μm line of the Er³⁺ transition displays a very weak temperature quenching in Er-doped hydrogenated a morphous Si. The PL intensity at 250K is a little more one half of that at 15K.