栅氧化层介质经时击穿的逾渗模型

在研究了MOSFET栅氧化层介质经时击穿物理机制的基础上，提出了氧化层击穿的逾渗模型.认为氧化层的击穿是E′心和氧空位等深能级缺陷产生与积累，并最终形成电导逾渗通路的结果.指出在电场作用下，氧化层中产生深能级缺陷，缺陷形成定域态，定域态的体积与外加电场有关.随着应力时间的增长，氧化层中的缺陷浓度增大，定域态之间的距离缩小.当定域态之间的距离缩小到一个阈值时，定域态之间通过相互交叠形成逾渗通路，形成扩展态能级，漏电流开始急剧增大，氧化层击穿. 关键词： 栅氧化层 TDDB 逾渗 模型

A physical-based percolation model for gate oxide TDDB

Based on the physical mechanism of gate oxide TDDB, a percolation model for gate oxide degradation was brought forward, in which the occurrence and build up of deep energy-level defects, such as E′ center and oxygen vacancy were considered to be the right cause of oxide breakdown. It was pointed out that, during TDDB the stressed defects were produced in the oxide, which form local states in oxide forbidden gap. And the volume of these local states is directly proportional to the external electric field, especially when the field strength is high enough. With the by-pass of stressing time, the concentration of defects in the oxide grew continually. As an effect, the distance between neighboring local states become shorter. So, hopping or tunneling probabilities of electrons between these local states increase swiftly. As a result, a conduction path will form when the distance between neighboring local states reaches a critical value. At the same time, in terms of energy band theory, an extended energy level will form in the oxide forbidden gap. Accompanied by a rapid increase of SILC, the gate oxide undergoes breakdown.