快中子辐照直拉硅中受主和施主的研究

通过傅里叶红外光谱、正电子湮没寿命谱和Hall技术研究了高剂量快中子辐照直拉硅的辐照 缺陷、电阻率、载流子迁移率、载流子浓度随退火温度的变化.经快中子辐照，直拉硅样品 的导电类型由n型转变为p型.在450和600℃热处理出现两种受主中心，分别由V2_{2O22，V22O，VO22，V-O-V及V44型缺 陷引起，这些缺陷态的出现使得样品中空穴浓度迅速增加；大于650℃热处理这些受主态 缺陷迅速消失， 关键词： 快中子辐照 空位型缺陷 受主 施主}

Investigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon

Variations of the irradiated defects, resistivity, carrier mobility ratio and ca rrier concentration in high-dose neutron-irradiated n-type Czochralski silico n have been investigated by means of Fourier transform infrared spectrometer, po sitron annihilation spectroscopy and Hall effect. After irradiated with fast neu tron, the sample transformed from n to p-type. Two types of acceptor centers th at contribute to the V2₂O2₂, V2₂O, VO2_{2, V-O-V and V 44-type defects will appear after annealing at temperature of 450 a nd 600 ℃, respectively. After annealing at temperatures above 650℃, with the elimin ation of acceptors, the carrier mobility ratio and the carrier-type began to re cover and a type of donor related to the irradiated defects will appear. The eff ective annealing temperature is 750℃ at which the donor is formed, and anneal ing above 900℃ for 1h will eliminate the donor.}