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(Sr,Co,Nb)掺杂SnO2压敏电阻的电学非线性
引用本文:亓 鹏,王矜奉,陈洪存,苏文斌,王文新,臧国忠,王春明.(Sr,Co,Nb)掺杂SnO2压敏电阻的电学非线性[J].物理学报,2003,52(7):1752-1755.
作者姓名:亓 鹏  王矜奉  陈洪存  苏文斌  王文新  臧国忠  王春明
作者单位:山东大学物理与微电子学院晶体材料国家重点实验室,济南 250100
基金项目:国家自然科学基金(批准号:50072013)资助的课题.
摘    要:研究了Sr对新型(Co, Nb)掺杂SnO2压敏材料微观结构和电学性质的影响.当SrCO 3的含量从零增加到1.50mol%时,(Co, Nb)掺杂SnO2压敏电阻的击穿电压从240V/mm猛增 到1482V/mm.样品的微观结构分析发现, 当SrCO3的含量从零增加到1.50 mol%时, SnO2的晶粒尺寸迅速减小.晶界势垒高度测量揭示,SnO2晶粒尺寸的迅速减小是击穿 关键词: 碳酸锶 二氧化锡 势垒 电学非线性

关 键 词:碳酸锶  二氧化锡  势垒  电学非线性
收稿时间:2002-09-30
修稿时间:2002年9月30日

Nonlinear electrical properties of (Sr, Co, Nb)-doped SnO2 varistors
Qi Peng,Wang Jin-Feng,Chen Hong-Cun,Su Wen-Bin,Wang Wen-Xin,Zang Guo-Zhong and Wang Chun-Ming.Nonlinear electrical properties of (Sr, Co, Nb)-doped SnO2 varistors[J].Acta Physica Sinica,2003,52(7):1752-1755.
Authors:Qi Peng  Wang Jin-Feng  Chen Hong-Cun  Su Wen-Bin  Wang Wen-Xin  Zang Guo-Zhong and Wang Chun-Ming
Abstract:The effect of Sr on the microstructure and nonlinear electrical properties of the (Co, Nb)-doped SnO2 varistors was investigated. The breakdown volta ge of the SnO2-based varistors increased significantly from 240 to 1482V/mm w ith increasing SrCO3 concentration from 0 to 1.50 mol%. Measurement of the ba rrier height at grain boundaries reveal that the significant decrease of the SnO2 grain size with increasing SrCO3 concentration from 0 to 1.50 mol%, is the reason of the enhancement of the breakdown voltage. The origin for the reduction of SnO2 grain size with increasing SrCO3 concentration was ex plained. The 1.50 mol% SrCO3-doped SnO2 varistor with ultrahigh breakdown vo ltage (1482V/mm) and larger nonlinear coefficient α(21.4) is a candidate used in the ultrahigh voltage protection system.
Keywords:strontium titanate  tin oxide  barrier  electrical nonlinearity  
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