基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制

以自组装单层胶体小球阵列为掩模，采用直接胶体晶体刻蚀技术在硅表面制备二维有序尺寸可控的纳米结构.在样品制备过程中，首先通过自组装法在硅表面制备了直径200nm的单层聚苯乙烯(PS)胶体小球的二维有序阵列；然后对样品直接进行反应离子刻蚀(RIE)，以氧气为气源，利用氧等离子体对聚苯乙烯小球和对硅的选择性刻蚀作用，通过改变刻蚀时间，制备出不同尺寸的PS胶体小球的有序单层阵列；接着以此二维PS胶体单层膜为掩模，以四氟化碳为气源对样品进行刻蚀；最后去除胶体球后得到二维有序的硅柱阵列.SEM和AFM的测量结果表明：改变氧等离子体对胶体球的刻蚀时间和四氟化碳对硅的刻蚀时间，可以控制硅柱的尺寸以及形貌，而硅柱阵列的周期取决于原始胶体球的直径. 关键词： 胶体晶体刻蚀 纳米硅柱阵列

Size and morphology control of highly-ordered nano-silicon pillar fabricated by direct nanosphere lithography

2D ordered,size-controlled nano-pillar was fabricated onto silicon substrate by direct nanosphere lithography with a mask of colloidal spheres.First,an ordered single layer of polystyrene(PS)nanosphere with a diameter of 200 nm was obtained by self-assembly on silicon surface.Then,the size of PS nanosphere on silicon substrate was reduced by reactive ion etching(RIE)with oxygen to form size-controllable PS nanosphere templates.Finally,these samples with nanosphere templates were etched by RIE with carbon fluoride to fabricate 2D ordered silicon pillar.The size of pillar is determined by the PS sphere diameter reduced by RIE and is controlled easily by choosing appropriate etching time.The period of silicon pillar arrays is determined by the initial diameter of PS spheres.