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La掺杂对Bi4Ti3O12薄膜铁电性能的影响
引用本文:郭冬云,王耘波,于 军,高俊雄,李美亚.La掺杂对Bi4Ti3O12薄膜铁电性能的影响[J].物理学报,2006,55(10):5551-5554.
作者姓名:郭冬云  王耘波  于 军  高俊雄  李美亚
作者单位:(1)华中科技大学电子科学与技术系,武汉 430074; (2)武汉大学物理科学与技术学院,武汉 430072; (3)武汉大学物理科学与技术学院,武汉 430072;华中科技大学电子科学与技术系,武汉 430074
基金项目:湖北省自然科学基金(批准号:2003ABA061,2004ABA082)资助的课题.
摘    要:利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论. 关键词: 铁电性能 4Ti3O12薄膜')" href="#">Bi4Ti3O12薄膜 3.25La0.75Ti3O12薄膜')" href="#">Bi3.25La0.75Ti3O12薄膜 sol-gel法 La掺杂

关 键 词:铁电性能  Bi4Ti3O12薄膜  Bi3.25La0.75Ti3O12薄膜  sol-gel法  La掺杂
收稿时间:11 28 2005 12:00AM
修稿时间:2005-11-282006-02-16

Effect of La doping on ferroelectric properties of Bi4Ti3O12 thin film
Guo Dong-Yun,Wang Yun-Bo,Yu Jun,Gao Jun-Xiong and Li Mei-Ya.Effect of La doping on ferroelectric properties of Bi4Ti3O12 thin film[J].Acta Physica Sinica,2006,55(10):5551-5554.
Authors:Guo Dong-Yun  Wang Yun-Bo  Yu Jun  Gao Jun-Xiong and Li Mei-Ya
Institution:1 Department of Physics, Wuhan University, Wuhan 430072, China; 2 Departmen of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract:The Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films are prepared on the Pt/Ti/SiO2/Si substrate using sol-gel method. The structures Pt/Bi3.25La0.75Ti3O12/Pt and Pt/Bi4Ti3O12/Pt are fabricated. The effects of La doping on the microstructures, and ferroelectric properties of Bi4Ti3O12 films are investigated. The 2Pr with test voltage 6V for the sample annealed at 700℃ increased from 12.5 μC/cm2 to 18.6 μC/cm2, and 2Vc is still 2.8 V when the La3+ ions occupy part of Bi3+ sites. The Bi3.25La0.75Ti3O12 films showed fatigue-free behavior. The mechanism of improvement of La-doped Bi4Ti3O12 ferroelectric thin films is discussed.
Keywords:ferroelectric properties  Bi4Ti3O12 thin film  Bi3  25La0  75Ti3O12 thin film  sol-gel method  La doping
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