热丝法制备纳米晶硅薄膜结构及沉积机制的研究

用热丝法制备了纳米晶硅薄膜．通过Raman散射谱及X射线谱，系统地研究了沉积气压P_g、高H₂稀释及衬底与钨丝之间距离对沉积速率、纳米硅薄膜的形成和结构等的影响．计算了沉积过程中的温度场分布．讨论了沉积过程中反应基元的输运和相关的气相反应，以及H在薄膜生长中的作用，由此分析了沉积参量对薄膜结构的影响，得到了与实验相一致的结果． 关键词：

INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

The nc Si∶H thin films were prepared by hotfilament vapor deposition.The effect of gas pressure,-high H₂ dilution and substrate-to-filament distance on deposition rate,the formation and structure of nc-Si∶H films was systematically studied.The structure of nc-Si∶H was determined using Raman scattering and X-ray diffraction.The temperature distribution was calculated;the travel of radicals evaporated from the filament and the gas-phase reaction were discussed in detail.The results were in agreement with the measurement.