| Si1-xGex/Si异质结构中热应力对临界厚度的影响 |
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| 引用本文： | 黄靖云,叶志镇,阙端麟.Si1-xGex/Si异质结构中热应力对临界厚度的影响[J].物理学报,1997,46(10):2010-2014. |
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| 作者姓名： | 黄靖云 叶志镇 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室 |
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| 基金项目： | 国家自然科学基金,国家教育委员会跨世纪优秀人才培养计划 |
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| 摘 要： | 系统分析了Si1-xGex/Si外延生长中热应力对外延生长的影响．假设Si Ge的线膨胀系数是随Ge的组分线性变化的，由此计算出热应变和应变能密度．根据能量平衡原理，当失配应变能密度加热应变能密度等于位错能密度时，外延层达到临界厚度，在People的基础上得出了改进的临界厚度计算公式．理论计算值与People的实验值更相近．
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| 关 键 词： | 临界厚度 硅 锗 异质结构 热应力 |
| 收稿时间： | 1996-12-09 |
CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURES |
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| HUANG JING-YUN,YE ZHI-ZHEN and QUE DUAN-LIN.CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURES[J].Acta Physica Sinica,1997,46(10):2010-2014. |
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| Authors: | HUANG JING-YUN YE ZHI-ZHEN and QUE DUAN-LIN |
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| Abstract: | Effect of thermal strain on growth of SiGe strained layer on Si was analysed.Formulae for critical layer thickness were obtained by considering thermal strain in energy balance under the assumption of screw dislocation energy density equal to the sum of areal strain energy density and thermal strain energy density.The relationship between the thermal expansion coefficient associated with thermal strain and Ge content x was linear.The results are in good agreement with the experimental results reported. |
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