一种新的具有n+pp+结构的超高速阶跃二极管的研究

本文考察了影响阶跃恢复二极管阶跃截止时间的诸因素。在此基础上,提出一种新的超高速阶跃二极管结构——窄基区n⁺pp⁺突变结结构。分析表明,这种结构的阶跃二极管因采用扩散系数大的载流子作为注入基区的少数载流子,其本征阶跃时间大为缩短。根据这一思想设计制作了实用的二极管,实际测得的最快阶跃截止时间小于50ps(按10—90％计算)。 关键词：

A NEW ULTRA HIGH SPEED SNAP-OFF DIODE WITH n+pp+ STRUCTURE

Various important factors determining the snap-off time of the step-recovery-diode (SRD) are investigated. In addition, a new structure of SED is proposed, that is n⁺pp⁺ diode with abrupt n⁺p junction and narrow p base region. The analysis shows that because the carriers injected into the base region have larger diffusion coefficient, the snap-off time of such diode is greatly reduced. The process used to produce this diode is also described, and many diodes produced by this method have been employed in many practical circuits. The best result of the snap-off time is smaller than 50 ps (10-90%).