| 电场调谐InAs量子点荷电激子光学跃迁 |
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| 引用本文： | 李文生,孙宝权*.电场调谐InAs量子点荷电激子光学跃迁[J].物理学报,2013,62(4):47801-047801. |
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| 作者姓名： | 李文生 孙宝权* |
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| 作者单位： | 1. 通辽职业学院 化工学院, 通辽 028000;2. 中国科学院半导体研究所, 半导体超晶格国家重点实验室, 北京 100083 |
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| 基金项目： | 国家自然科学基金(批准号:11074246)资助的课题. |
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| 摘 要： | 在低温5 K下, 采用光致发光光谱及外加偏压调谐量子点电荷组态研究了InAs单量子点的精细结构和对应发光光谱的偏振性、不同带电荷激子的圆偏振特性. 得出如下结果: 1) 指认InAs单量子点中不同荷电激子的发光光谱和对应的激子本征态的偏振特性; 2) 外加偏压可以调谐量子点的荷电激子的发光光谱; 3) 伴随着电子、空穴的能量弛豫, 电子的自旋弛豫时间远大于空穴的自旋弛豫时间.
关键词：
InAs量子点
激子
荧光光谱
电场调谐
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| 关 键 词： | InAs量子点 激子 荧光光谱 电场调谐 |
| 收稿时间： | 2012-07-21 |
Optical transition of the charged excitons in InAs single quantum dots |
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| Li Wen-Sheng,Sun Bao-Quan.Optical transition of the charged excitons in InAs single quantum dots[J].Acta Physica Sinica,2013,62(4):47801-047801. |
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| Authors: | Li Wen-Sheng Sun Bao-Quan |
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| Institution: | 1. College of Chemical Engineering, Tongliao ProfessionalEducation College, Tongliao 028000, China;2. The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Quantum dot (QD) samples studied in the experiment are grown by molecular-beam epitaxy on semi-insulating GaAs substrates. The photoluminescences (PLs) of the excitons in a single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are identified by measuring and analyzing both PL peaks of the circular and linear polarization and power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing the voltage from 1.0 to -1.0 V. It is shown that the electron-spin will slowly relax compared with that of the hole when they relax from wetting layer into the QD. |
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| Keywords: | InAs quantum dot excitons photoluminescence spectrum electric tuning |
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