GaAs(311)A衬底上自组装InAs量子点的结构和光学特性

报道了GaAs(311)A衬底上的自组装InAs量子点的结构和光学特性.原子力量显微镜结果表明（311）A GaAs衬底上的InAs量子点呈箭头状，箭头方向沿233]方向.实验发现，量子点的光致发光（PL)强度、峰位、半高宽都与测量温度密切相关.随着温度的升高，量子点的发光强度减小，峰位快速红移，半高宽单调下降.可以认为这是由于载流子先被热激活到浸润层势垒后再被俘获到能量较低的量子点中进行复合造成的，这一模型圆满解释了我们的实验结果. 关键词：

STRUCTURAL AND OPTICAL PROPERTIES OF SELF-ASSEMBLED InAs QUANTUM DOTS GROWN ON GaAs(311) A SUBSTRATE

We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311)A substrates. Atomic force microscopic result shows that QDs on (311)A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the 233] direction. The photolumi-nescence (PL) intensity, peak position and the full width at half maxinum (FWHM) are all colsely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.