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ZnO退火条件对硫化法制备的ZnS薄膜特性的影响
引用本文:王宝义,张仁刚,张辉,万冬云,魏龙.ZnO退火条件对硫化法制备的ZnS薄膜特性的影响[J].物理学报,2005,54(4):1874-1878.
作者姓名:王宝义  张仁刚  张辉  万冬云  魏龙
作者单位:中国科学院高能物理研究所, 北京 100049
基金项目:国家自然科学基金(批准号:10275076) 资助的课题.
摘    要:采用反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后经过不同条件退火和在H22S气氛中硫化最终得到ZnS薄膜. 用x射线粉末衍射仪、扫描电子显微镜和UV—VIS分光光度计 对ZnS薄膜样品进行了分析. 结果表明, ZnO薄膜硫化后的晶体结构和光学性质取决于它的退 火条件. 真空和纯O22中退火的ZnO薄膜硫化后只是部分形成六角晶系结构的ZnS . 而在空气 和纯N22中退火的ZnO薄膜则全部转变为ZnS, 在可见光范围内的光透过率 关键词: ZnS薄膜 磁控溅射 ZnO硫化 太阳电池

关 键 词:ZnS薄膜  磁控溅射  ZnO硫化  太阳电池
文章编号:1000-3290/2005/54(04)/1874-05
收稿时间:7/2/2004 12:00:00 AM
修稿时间:9/8/2004 12:00:00 AM

Influence of annealing conditions of ZnO films on the properties of ZnS films pr epared by sulfurizing ZnO films
WANG Bao-yi,ZHANG Ren-gang,Zhang Hui,WAN Dong-yun,Wei Long.Influence of annealing conditions of ZnO films on the properties of ZnS films pr epared by sulfurizing ZnO films[J].Acta Physica Sinica,2005,54(4):1874-1878.
Authors:WANG Bao-yi  ZHANG Ren-gang  Zhang Hui  WAN Dong-yun  Wei Long
Abstract:ZnS films are prepared on glass and quartz substrates by sulfidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under v arious conditions. The sulfurized films are characterized by using x_ray diffrac tion, scanning electron microscope and UV—VIS spectrometer. The results show t hat the crystalline structure and optical properties of the sulfurized films dep end on the annealing conditions. ZnO films annealed in vacuum and pure O2 2 at mosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N22, respectively, are converted t otally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air an d pure N22, respectively, have a high optical transmittance of about 80% at the wavelength of 400—800nm, with the band-gap energies of 366 and 361eV, respectively.
Keywords:ZnS films  magnetron sputtering  sulfidation of ZnO  solar cells
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