二维移相光栅光强分布的计算及在制备有序纳米硅阵列中的应用

从菲涅耳衍射积分的一般形式出发，结合二维（2D）移相光栅掩模(PSGM)的具体参数，通过数值计算得到了作用于样品表面的光强分布.实验上，采用激光干涉晶化的方法，利用周期为400 nm的2D-PSGM调制KrF准分子激光器的脉冲激光束斑的能量分布，在氢化非晶硅（a-Si:H）薄膜上直接制备了2D的有序纳米硅（nc-Si）阵列.测试结果表明：2D的nc-Si阵列的周期和PSGM的相一致，晶化区域与理论模拟的结果符合得很好. 关键词： 纳米硅 激光干涉晶化 移相光栅 菲涅耳衍射

Light intensity distribution in laser interference crystallization and the fabrication of two-dimensional periodic nanocrystalline silicon array

Based on the general form of Fresnel diffraction,light intensity distribution in laser interference crystallization with a phase shifting grating mask (PSGM) was calculated.Two-dimensional (2D) periodic nanocrystalline silicon (nc-Si) array was fabricated by laser interference crystallization combined with 2D-PSGM.The light intensity irradiated on the surface of a-Si:H samples can be modulated by the PSGM with the periodicity of 400 nm.Experimental results demonstrate that the periodicity of 2D nc-Si array is the same as that of the PSGM,the crystalline regions of nc-Si array are consistant with the simulated results.