稳态、瞬态X射线辐照引起的互补性金属-氧化物-半导体器件剂量增强效应研究

重点开展了稳态、瞬态X射线辐照引起的金属氧化物半导体(CMOS)器件剂量增强效应relative dose enhancement effect(RDEF)研究.通过实验给出辐照敏感参数随总剂量的变化关系,旨在建立CMOS器件相同累积剂量时Χ射线辐照和γ射线辐照的总剂量效应损伤等效关系.在脉冲X射线源dense plasma focus(DPF)装置上,采用双层膜结构开展瞬态翻转增强效应研究,获得了瞬态翻转剂量增强因子.这些方法为器件抗X射线辐照加固技术研究提供了实验技术手段. 关键词： X射线 剂量增强因子 总剂量效应 剂量率效应

STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS

The results are presented with emphasis on the relative dose-enhancement factor for complementary metal-oxide semiconductor (CMOS) devices irradiated by steady state and transient pulsed X-rays. With the help of experimental study, sensitive parameter threshold voltage as a function of irradiation dose was obtained. So the equivalent relation of total dose damage is eslablished by comparing the response of devices irradiated by ⁶⁰Co γ-rays and X-rays. By employing the X-ray transient pulsed sources, the research of X-rays transient upset enhancement effects is carried out using bi-laminate structure. Upset enhancement factor of X-rays are measured. These methods are provided for X-ray radiation hardening technology an effective evaluation method.