| K/GaAs(100)表面的氮化 |
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| 引用本文： | 胡海天,来 冰,袁泽亮,丁训民,侯晓远.K/GaAs(100)表面的氮化[J].物理学报,1998,47(6):1041-1046. |
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| 作者姓名： | 胡海天 来 冰 袁泽亮 丁训民 侯晓远 |
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| 作者单位： | 复旦大学应用表面物理国家重点实验室，上海 200433 |
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| 基金项目： | 国家自然科学基金和上海市科学技术委员会资助的课题. |
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| 摘 要： | K吸附层的存在能促进GaAs(100)表面在室温下的氮化.光电发射测量为此提供了证据.在将K/GaAs(100)暴露于纯氮以后，价带和芯能级谱均会出现显著变化：功函数有一定程度回升，价带谱中显露N2p峰，Ga2p和As2p芯能级谱中产生化学位移分量.就所研究的三种不同的K覆盖度(1/4，1/2和1ML)而言，1ML的那种显示了最强的促进作用.
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| 关 键 词： | 价带 芯能级谱 钾吸附层 砷化镓 表面氮化 |
| 收稿时间： | 8/4/1997 12:00:00 AM |
NITRIDATION OF K/GaAs(100) SURFACES |
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| HU HAI-TIAN,LAI BING,YUAN ZE-LIANG,DING XUN-MIN and HOU XIAO-YUAN.NITRIDATION OF K/GaAs(100) SURFACES[J].Acta Physica Sinica,1998,47(6):1041-1046. |
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| Authors: | HU HAI-TIAN LAI BING YUAN ZE-LIANG DING XUN-MIN and HOU XIAO-YUAN |
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| Abstract: | Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect. |
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