| 超薄膜外延生长的计算机模拟 |
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| 引用本文： | 吴锋民,朱启鹏,吴自勤.超薄膜外延生长的计算机模拟[J].物理学报,1998,47(9):1427-1435. |
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| 作者姓名： | 吴锋民 朱启鹏 吴自勤 |
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| 作者单位： | (1)浙江工业大学技术物理研究所，杭州 310014; (2)中国科学技术大学基础物理中心，合肥 230026 |
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| 摘 要： | 对超薄膜的生长过程进行了计算机模拟，得到与实验结果一致的团簇生长形貌及“台阶流动”结果，分析了邻晶面偏离角对成核密度等的影响，并计算了台阶流动的阈值及团簇的分形维数.
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| 关 键 词： | 超薄膜 薄膜器件 外延生长 计算机模拟 |
| 收稿时间： | 1997-11-17 |
COMPUTER SIMULATION OF THE EPITAXY GROWTH IN ULTRA-THIN FILMS |
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| WU FENG-MIN,ZHU QI-PENG and WU ZI-QIN.COMPUTER SIMULATION OF THE EPITAXY GROWTH IN ULTRA-THIN FILMS[J].Acta Physica Sinica,1998,47(9):1427-1435. |
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| Authors: | WU FENG-MIN ZHU QI-PENG and WU ZI-QIN |
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| Abstract: | The aggregation in ultra-thin films is simulated.The growth morphologies,such as the fractal growth of clusters and the “step-flow”,are obtained.The relation between the density of the clusters and the bias angle of vicinal surface is analyzed,and the threshold value of step-flow and the fractal dimensions of the clusters are also calculated.The simulation results are consistent with the experiments. |
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