Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为10%，15%，20%和30%的Cu-MgF₂复 合金属陶 瓷薄膜.用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特 性进行了测试分析.微结构分析表明：制备的Cu-MgF₂复合薄膜由fcc-Cu晶态纳 米微粒镶嵌 于主要为非晶态的MgF₂陶瓷基体中构成，Cu晶粒的平均晶粒尺寸随组分增加从1 1.9nm增 至17.8nm.50—300K温度范围内的电导测试结果表明：当Cu体积 关键词： 2复合纳米金属陶瓷膜')" href="#">Cu-MgF₂复合纳米金属陶瓷膜 微结构 组分 电导特性 激活能 渗透阈

A study on the electrical conductivity of Cu-MgF2 nanoparticle cermet films

Cu-MgF₂ nanoparticle cermet films with the copper volume fraction of vol.10%-30% were prepared by rf magnetron co-sputtering deposition and analyzed by x-ray diffraction, x-ray photoelectron spectroscopy and temperature-varying four-wi re technique. Microstructure analysis shows that the cermet films are made of m ainly amorphous MgF₂ matrix with embedded fcc-Cu nanoparticles. The a verage si ze of Cu nanoparticles increases from 11.9nm to 17.8nm as Cu content rises fro m vol.10% to vol.30%. The results of electrical conductivity from 50 to 300K sho w that when Cu volume fraction is between 15 and 20%, the film shows a percolati on threshold q^C_M, and the electric conductivity changes～e ight orders. T he active energies of doping and the intrinsic conductivity of the cermet films and their contributions to the film electrical conductivity are discussed. Based on the percolation theory, the percolation threshold of Cu-MgF₂ cerm et film is discussed as well.