首页 | 本学科首页   官方微博 | 高级检索  
     检索      

高温电子辐照硅中缺陷的研究
引用本文:陆昉,孙恒慧,黄蕴,盛篪,张增光,王梁.高温电子辐照硅中缺陷的研究[J].物理学报,1987,36(6):745-751.
作者姓名:陆昉  孙恒慧  黄蕴  盛篪  张增光  王梁
作者单位:(1)复旦大学物理系; (2)上海整流器总厂
摘    要:本文对高温电子辐照硅中产生的缺陷进行了研究,发现缺陷的引进率随电子辐照温度的增加而增加,在达到极值温度Tm后,缺陷的引进率将随之而下降,Tm值与缺陷的退火激活能有关。E3缺陷(Ec—0.36eV)浓度在高温电子辐照中显著增加,在330℃高温电子辐照时,E3缺陷浓度为室温电子辐照的6倍。研究结果表明,E3缺陷的可能结构为与多空位和氧有关的复合体。 关键词

收稿时间:1986-07-29

STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION
LU FANG,SUN HENG-HUI,HUANG YUN,SHENG CHI,ZHANG ZENG-GUANG and WANG LIANG.STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION[J].Acta Physica Sinica,1987,36(6):745-751.
Authors:LU FANG  SUN HENG-HUI  HUANG YUN  SHENG CHI  ZHANG ZENG-GUANG and WANG LIANG
Abstract:A study of defects in silicon produced by hightemperature electron irradiation was carried out. It was found that the introduction rate of defect increased with the temperature at which the samples were irradiated by electron. After the temperature reached an "extreme" value Tm, the introduction rate of defect began to decrease. The Tm value was related to the annealing activation energy of defect. It was also found that the density of E3 (Ec-0.36 eV) defects greatly increased in hightemperature electron irradiation. When electron irradiation was carried out at 330℃, the density of E3 defects was about 6 times as large as that at room temperature. The possible structure of the E3 defect is multivacancy-oxygen complex.
Keywords:
本文献已被 CNKI 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号