含有δ掺杂层的SiGe pMOS量子阱沟道空穴面密度研究

建立了含有δ掺杂层的SiGe pMOS器件量子阱沟道中空穴面密度的静态与准静态物理模型，并对该模型进行了数值分析.讨论了静态时器件量子阱空穴面密度与δ掺杂层杂质浓度和本征层厚度的关系，阈值电压VT与δ掺杂层杂质浓度NA、量子阱沟道载流子面密度Ps及本征层厚度di等参数间的关系.同时还讨论了准静态时量子阱空穴面密度P′s与栅压VGS的关系. 关键词： δ掺杂层 空穴面密度

Hole-sheet-density in SiGe pMOS quantum well with δ-doping-layer

In this paper, static state and quasi static state models of quantum well channel hole sheet density of SiGe pmetaloxide semiconductor with δ doping layer are established and analyzed. The relations between hole sheet density and δ doping layer concentration, between hole sheet density and un doping layer hickness at static state are also discussed, and the relations of the threshold voltage to the δ doping layer concentration, the quantum well channel hole sheet density and the thickness of the undoping layer are discussed. At last, the relation of the quantum well channel hole sheet density to gate voltage for the quasi static state is discussed.