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高完整GexSi1-x/Si应变超晶格的X射线双晶衍射研究
引用本文:田亮光,朱南昌,陈京一,李润身,许顺生,周国良.高完整GexSi1-x/Si应变超晶格的X射线双晶衍射研究[J].物理学报,1991,40(3):441-448.
作者姓名:田亮光  朱南昌  陈京一  李润身  许顺生  周国良
作者单位:(1)复旦大学表面物理实验室,上海,200433; (2)中国科学院上海冶金研究所,上海,200050
基金项目:中国科学院上海冶金研究所青年科学基金
摘    要:本文用X射线双晶衍射技术对分子束外延生长的GexSi1-x/Si应变超晶格的结构参数进行研究,分别采用X射线运动学理论和动力学理论对超晶格的双晶摆动曲线进行计算模拟,得出超晶格的全部结构参数;并对这两种理论计算模拟的结果进行比较,发现这两种理论计算的结果基本一致,只是在细微结构上略有差别,对高完整GexSi1-x/Si超晶格,用动力学理论计算的曲线更接近于实验曲线。 关键词

关 键 词:超晶格  X射线  双晶衍射  Si  Ge
收稿时间:1990-05-28

X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE
TIAN LIANG-GUANG,ZHU NAN-CHANG,CHEN JING-YI,LI RUN-SHEN,XU SHUN-SHENG and ZHOU GUO-LIANG.X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE[J].Acta Physica Sinica,1991,40(3):441-448.
Authors:TIAN LIANG-GUANG  ZHU NAN-CHANG  CHEN JING-YI  LI RUN-SHEN  XU SHUN-SHENG and ZHOU GUO-LIANG
Abstract:In this paper, the analysis of GexSi1-x/Si strained layer superlattice grown by MBE is made by means of X-ray double crystal diffraction. The structure parameters of GexSi1-x/Sisuperlattice is obtained from the simulation of rocking curve based on X-ray kinematical and dynamical diffraction theory respectively. The results calculated with these two theories is almost the same, there is a little difference only in the fine structure of rocking curve. For the high quality GexSi1-x/Si superlattice, the rocking cu rve calculated with X-ray dynamical theory is more close to the experimental curve than that with X-ray kinematical theory.
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