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氢化硅薄膜介观力学行为及其与微结构内禀关联特性
引用本文:王权,丁建宁,何宇亮,薛伟,范真.氢化硅薄膜介观力学行为及其与微结构内禀关联特性[J].物理学报,2007,56(8):4834-4840.
作者姓名:王权  丁建宁  何宇亮  薛伟  范真
作者单位:(1)江苏大学微纳米科学技术研究中心,镇江 212013; (2)江苏大学微纳米科学技术研究中心,镇江 212013;南京大学物理系,南京 210093; (3)温州大学工业工程学院,温州 323035
基金项目:江苏省六大人才高峰基金;国家重点基础研究发展计划(973计划);浙江省科技发展计划;江苏大学博士生创新基金资助的课题
摘    要:使用等离子体增强化学气相沉积系统,在射频和直流负偏压的双重激励下制备了本征和掺杂后的氢化硅薄膜.利用拉曼谱对薄膜进行了微结构分析,用纳米压痕系统研究了薄膜的介观力学行为.研究表明:制备于玻璃衬底上的氢化硅薄膜,由于存在非晶态的过渡缓冲层,弹性模量小于相应的制备于单晶硅衬底的薄膜.对于掺杂的氢化硅薄膜,由于磷的掺入使得薄膜晶粒细化、有序度提高,薄膜的晶态比一般在40%以上.而硼的掺入,薄膜晶态比减小,一般低于40%.同时发现,掺磷、本征和掺硼的氢化硅薄膜分别在晶态比为45%,30%和15%左右处,弹性模量较 关键词: 氢化硅薄膜 拉曼谱 弹性模量 晶态比

关 键 词:氢化硅薄膜  拉曼谱  弹性模量  晶态比
文章编号:1000-3290/2007/56(08)/4834-07
收稿时间:2006-12-18
修稿时间:2/8/2007 12:00:00 AM

Mesoscopic mechanical characterization of hydrogenated silicon thin film and the intrinsic relationship with the microstructure
Wang Quan,Ding Jian-Ning,He Yu-Liang,Xue Wei,Fan Zhen.Mesoscopic mechanical characterization of hydrogenated silicon thin film and the intrinsic relationship with the microstructure[J].Acta Physica Sinica,2007,56(8):4834-4840.
Authors:Wang Quan  Ding Jian-Ning  He Yu-Liang  Xue Wei  Fan Zhen
Institution:1. Center of Micro and Nano cience and Technology, Jiangsu University, Zhenjiang 212013, China;2.Department of Physics , Nanjing University, Nanjing 210093, China;3.School of Industrial Engineering, Wenzhou University, Wenzhou 323035, China
Abstract:Hydrogenated silicon films were deposited on glass and single crystalline silicon substrate in a capacitively coupled radio-frequent plasma enhanced vapor deposition system aided by direct current bias excitation. Hydrogenated silicon films are used to realize a silicon material that consists of a two-phase mixture of amorphous and ordered silicon. Micro-Raman scattering is employed to investigate the thin film microstructure. The crystalline volume fraction (Xc) is obtained from the Raman spectra. Mesoscopic mechanical characterization of the thin film is done by nanoindentation based on the conventional depth-sensing indentation method. An analytical relation between Xc and elastic modulus is established. It is shown that the elastic modulus of the film on glass substrate is lower than that on silicon with the the same Xc. The grain size of phosphorus doped thin film is smaller than that of the intrinsic one and more ordered. The Xc is usually above 40%. The film with diborane doping is on the opposite, the Xc of which is usually below 40%. For P-doped, intrinsic and B-doped fims, when the Xc values are 45%, 30% and 15%, respectively, the values of elastic modulus are minimal.
Keywords:hydrogenated silicon film  Raman spectra  elastic modulus  crystalline volume fraction
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