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氢稀释对高速生长纳米晶硅薄膜晶化特性的影响
引用本文:邱胜桦,陈城钊,刘翠青,吴燕丹,李平,林璇英,黄种,余楚迎.氢稀释对高速生长纳米晶硅薄膜晶化特性的影响[J].物理学报,2009,58(1):565-569.
作者姓名:邱胜桦  陈城钊  刘翠青  吴燕丹  李平  林璇英  黄种  余楚迎
作者单位:(1)韩山师范学院物理与电子工程系,潮州 521041; (2)韩山师范学院物理与电子工程系,潮州 521041;汕头大学物理系,汕头 515063; (3)汕头大学物理系,汕头 515063
基金项目:韩山师范学院基金(批准号:FC200508)资助的课题.
摘    要:以SiH4与H2为气源,采用射频等离子体增强化学气相沉积技术,在较高的压强(230Pa)下,研究氢稀释率对纳米晶硅薄膜的生长速率和晶化特性的影响. 实验表明,薄膜的晶化率,晶粒尺寸随着氢稀释率的提高而增加,当氢稀释率为99%,薄膜的晶化率接近70%. 而沉积速率却随着氢稀释率的减小而增加,当氢稀释率从99%减小到95%时,薄膜的沉积速率由0.3nm/s 增加至0.8nm/s. 关键词: 纳米晶硅薄膜 氢稀释 晶化率 硅烷

关 键 词:纳米晶硅薄膜  氢稀释  晶化率  硅烷
收稿时间:2008-04-10
修稿时间:7/3/2008 12:00:00 AM

Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth
Qiu Sheng-Hua,Chen Cheng-Zhao,Liu Cui-Qing,Wu Yuan-Dan,Li Ping,Lin Xuan-Ying,Huang Chong,Yu Chu-Yi.Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth[J].Acta Physica Sinica,2009,58(1):565-569.
Authors:Qiu Sheng-Hua  Chen Cheng-Zhao  Liu Cui-Qing  Wu Yuan-Dan  Li Ping  Lin Xuan-Ying  Huang Chong  Yu Chu-Yi
Abstract:Nano-crystalline silicon films were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at a pressure of 230 Pa. The effect of hydrogen dilution on their growth rate and crystalline properties were investigated. The experimental results indicate that the crystalline fraction and grain size increase with increasing hydrogen dilution ratio, and when the hydrogen dilution ratio increases to 99%, the crystalline fraction reaches 70%. The deposition rate decreases with increasing hydrogen dilution ratio, when the hydrogen dilution ratio decreases from 99% to 95%, the deposition rate of thin film increases from 0.3nm/s to 0.8nm/s.
Keywords:nano-crystalline silicon thin films  hydrogen dilution  crystalline fraction  SiH4
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