磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究

采用磁控溅射技术沉积制铝/贫铀/铝(Al/DU/Al)、金/贫铀/金(Au/DU/Au) "三明治" 薄膜样品. 利用高分辨扫描电镜、 X射线衍射仪、X射线光电子能谱仪、 扫描俄歇微探针对Al/DU/Al, Au/DU/Au样品的Al/DU, Au/DU界面行为进行表征与研究. 结果表明: 沉积态DU层以柱状晶生长; Al/DU界面扩散明显, 物理扩散过程中伴随着Al, DU化学反应形成Al₂U, Al₃U金属化合物; 金属化合物的形成导致界面处Al 2p电子结合能向高能端移动, U 4f电子向低能端移动; 微量O在Al/DU界面处以Al₂O₃及铀氧化物形式存在; DU镀层中以铀氧化形式存在; 沉积态的Au/DU界面扩散为简单的物理扩散, 团簇效应导致Au/DU界面处Al 2p, U 4f电子结合能均向高能端移动; 在Au/DU界面及DU镀层中, 微量O以铀氧化物形式存在; Al/DU界面扩散强于Au/DU; 相同厚度的Al, Au保护镀层, Al镀层保护效果优于Au镀层. 关键词： Al/DU界面 Au/DU界面 磁控溅射 界面扩散

Study on interface of Al/depleted uranium and Au/depleted uranium layers deposited by magnetron sputtering

Aluminum/depleted uranium/aluminum (Al/DU/Al) and gold/depleted uranium/gold (Au/DU/Au) "sandwich structure" films are deposited by magnetron sputtering. Diffusions of Al/DU and Au/DU interface of these samples are investigated by high resolution scanning electronic microscope, X-ray diffraction, X-ray photoelectron spectrometer and scanning auger microprobe. The results show that deposited DU layer is of columnar grain. Significant diffusion takes place at Al/DU interface. Intermetallic compounds of Al₂U and Al₃U are formed at Al/DU interface by chemical reaction between Al and DU which induces chemical shift toward high binding energy of Al 2p and toward low binding energy of U 4f. Microdosages of O exist in Al over-layers as Al₂O₃, in Al/DU interface as Al₂O₃ and oxidation of uranium, and in DU layers as oxidation of uranium respectively. Just simple physical diffusion takes place at Au/DU interface. Binding energies of Au 4f and U 4f shift toward high-energy tail induced by cluster effect at the Au/DU interface. Microdosages of O exist at Au/DU interface and in DU layers as oxidation of uranium. Diffusion at the Al/DU interface is more obvious than at Au/DU surface. Under the condition of the same thickness valuses Al over-layer is more effective than Au over layer to protect uranium layer from oxidging.
Keywords： Al/DU interface Au/DU interface magnetron sputtering diffusion at interface