二氧化钒薄膜的低温制备及其性能研究

针对VO₂薄膜在微测辐射热计上的应用，采用射频反应溅射法，在室温下制备氧化钒薄膜；研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压，先获得成分接近VO₂的非晶化薄膜，再在400℃空气中氧化退火，便可制得高电阻温度系数，低电阻率的VO₂薄膜，电阻温度系数约为-4%/℃，薄膜方块电阻为R_□为100—300kΩ；薄膜在室温下沉积，400℃下退火的制备方法与微机电加工(micro electromechanic 关键词： 二氧化钒 电阻温度系数 氧分压 射频反应溅射法

Fabrication of vanadium dioxide films at low temperature and researches on properties of the films

The vanadium oxide thin films are fabricated for microbolometer by radio frequency reactive sputtering at room temperature. The effects of the oxygen partial pressure on deposition rate, electrical properties and compositions of the films are discussed. Films consisting mainly of VO₂ can be prepared by adjusting oxygen partial pressure. After oxidation annealing in air, the VO₂ films with high temperature coefficients of resistivity (about -4%/℃) and low resistivity can be obtained. The square resistances of the films are in the range between 100 kΩ/squ to 300kΩ/squ. All films are deposited at room temperature and annealed at 400℃, which is compatible with MEMS (micro electromechanical systems) process.