用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO_2薄膜

采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因 关键词： 离子束增强沉积 VO2薄膜 热电阻温度系数

Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V2O5 powder by ion beam enhanced deposition

A new method was employed to prepare VO 2 thin film directly from V 2O 5 powder. Pressed V 2O 5 powder of 99\^7% purity was used as sputtering target by argon ion beam. The hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. The bombardment of Ar + could break V\_O bond of V 2O 5 molecules in the deposited film and the implanted H + resulting in deoxidization of V 2O 5 to VO 2 thin film. After annealing, VO 2 film with temperature coefficient of resistance(TCR) as high as 4% was obtained. The TCR increasing was due to the stress introduced in film by implantation of argon ions with high doses, which decreases the transition temperature of the VO 2 film by ion beam enbanced deposition and the enlarged slope of resistance temperature curve.