硅中位错运动速度

本文用化学侵蚀法显示了硅晶体印压产生的位错。测量了在不同温度、不同切应力下“花结”上刃型(或60°)位错的运动速度。设位错运动是热激活的,激活能为～2.94eV.比较了900℃下刃型(或60°)位错及螺型位错的速度,后者较小。在不同样品上进行速度的测定,说明原生位错对形变位错运动有阻碍作用。观察到原生位错和晶界位错在外加力作用下的增殖,对位错在增殖中的速度进行了测量。讨论了本工作所用的实验方法,并分析了影响速度测量值的某些因素。

VELOCITY OF DISLOCATIONS IN SILICON CRYSTALS

The chemical etching method is used to reveal dislocations produced by indentation on silicon single crystal specimens. Edge (or 60°) dislocation velocities are measured under different shear stresses and at different temperatures (700-900℃). By assuming that the motion is thermally activated, the corresponding activation energy is obtained to be ～2.94 eV. Velocities of edge (or 60°) dislocations and screw dislocations at 900℃ are compared, the latter being smaller. Measurements of dislocation velocities on different specimens show the retarding effect of as-grown dislocations. Dislocation multiplication is observed from as-grown dislocations and from grain boundaries. Dislocation velocities in process of multiplication are measured. Factors affecting the measured values of dislocation velocities are discussed.