InP的多声子红外吸收

利用高分辨的傅里叶光谱仪,在400—4000cm^-1和11—300K范围内,观察到一些其吸收系数为10^-1cm^-1的新弱吸收峰,频率位置为996,965,932,838,806,776,742,718,590,558,538cm^-1。从这些弱吸收峰的频率位置和温度依赖关系,可以认为它们是由于三声子的晶格吸收过程所引起的。对此,我们做了适当的指认。此外,我们首次利用红外吸收法证实,LEC(B₂O₃)-CZInP单晶存在B玷污,其玷污量大约是10¹⁶cm^-3。 关键词：

MULTIPHONON ABSORPTION IN InP

IR absorption measurements have been made using a high resolution Fourier-transform spectrometer on crystals of InP in the 400-4000 cm^-1 region at temperature between 11-300 K. Very weak new absorption bands are observed, their absorption coefficients are ～10^-1 cm^-1, were observed at 996cm^-1, 965cm^-1, 932cm^-1, 838cm^-1, 776 cm^-1, 742cm^-1, 718cm^-1,590cm^-1, 558cm^-1 and 538 cm^-1. The frequencies and temperature dependence of these weak bands indicate that they arise from three-phonon processes and appropriate assignments are given. Using IR absorption technique, we observed for the first time the boron contamination in LEC(B₂O₃)-CZ InP crystals. The content of baron contamination has been proved to be ～10^-16cm^-1.