| 利用双载流子四陷阱模型解释Zn:Fe:LiNbO3晶体记录过程中的自擦除现象 |
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| 引用本文： | 孟庆鑫,宫德维,张建隆,孙秀冬.利用双载流子四陷阱模型解释Zn:Fe:LiNbO3晶体记录过程中的自擦除现象[J].物理学报,2004,53(6):1788-1792. |
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| 作者姓名： | 孟庆鑫 宫德维 张建隆 孙秀冬 |
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| 作者单位： | 哈尔滨工业大学应用物理系，哈尔滨 150001 |
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| 基金项目： | 教育部优秀青年教师资助计划，黑龙江省留学归国基金(批准号：LC01C11)和哈尔滨工业大学校基金(批准号：HIT2001.33)资助的课题. |
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| 摘 要： | 比较了掺Fe量相同的两种晶体Fe:LiNbO3和Zn:Fe:LiNbO3的光折变性能，并且给出了Zn:Fe:LiNbO3晶体光电导和衍射效率与入射总光强的关系.在Zn:Fe:LiNbO3晶体二波耦合实验中观察到衍射效率随记录时间的增长先增加，达到饱和后又逐渐减小的自擦除现象，并采用光折变双载流子四陷阱模型对该现象加以解释. 在此基础上选择合适的曝光时序，利用角度复用技术在该晶体中进行体全息存储，并在同一点上存入30幅图像.
关键词：
双载流子四陷阱模型
自擦除
电子-空穴竞争
角度复用
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| 关 键 词： | 双载流子四陷阱模型 自擦除 电子-空穴竞争 角度复用 |
| 文章编号： | 1000-3290/2004/53(06)/1788-05 |
| 收稿时间： | 9/9/2003 12:00:00 AM |
Study of self-erasing of recording process in Zn:Fe:LiNbO3 with the double-carrier four-trap model |
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| Meng Qing-Xin,Gong De-Wei,Zhang Jian-Long and Sun Xiu-Dong.Study of self-erasing of recording process in Zn:Fe:LiNbO3 with the double-carrier four-trap model[J].Acta Physica Sinica,2004,53(6):1788-1792. |
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| Authors: | Meng Qing-Xin Gong De-Wei Zhang Jian-Long and Sun Xiu-Dong |
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| Abstract: | Photorefractive properties of Zn:Fe:LiNbO3 crystals were compared with Fe:LiNbO3 crystals. We described the photoconduction and diffraction efficiency as a function of incident light intensity. The self-erasing of recording process in the Zn:Fe:LiNbO3 crystal is observed. We found that the diffraction efficiency of the crystal increased to a saturation value and then decreased as recording time increases. The phenomena were explained by the double-carrier four-trap model. A suit able exposure schedule is chosen to realize the angle-multiplexed volume holographic storage. We have stored 30 images in the same volume of the crystal. |
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| Keywords: | double-carrier four-trap model self-erasing charge-hole competition angle multiplex |
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