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不同密度氢吸附金刚石(100)表面的微观结构
引用本文:刘峰斌,汪家道,陈大融,赵明,何广平.不同密度氢吸附金刚石(100)表面的微观结构[J].物理学报,2010,59(9):6556-6562.
作者姓名:刘峰斌  汪家道  陈大融  赵明  何广平
作者单位:(1)北方工业大学机电工程学院,北京 100144; (2)清华大学摩擦学国家重点实验室,北京 100084
基金项目:国家重点基础研究发展计划(批准号:2007CB707702)资助的课题.
摘    要:利用基于广义梯度近似的密度泛函理论,计算了金刚石(100)表面不同氢吸附密度的平衡态几何结构和态密度.结果表明对于2×1构型,在平行和垂直表面两个方向上发生弛豫,而1×1构型仅在垂直表面方向上发生弛豫.另外,清洁2×1,2×1 ∶0.5H和1×1 ∶1.5H表面,带隙中存在空表面态;而对于1×1 ∶2H和2×1 ∶H两种表面结构,空表面态上移进入导带,带隙中不存在表面态.结合电荷密度分布,探讨了金刚石(100)不同构型和氢吸附密度表面的表面态诱发机理. 关键词: 氢吸附 金刚石 弛豫 表面态

关 键 词:氢吸附  金刚石  弛豫  表面态
收稿时间:2009-11-15

The microstructures of the diamond (100) surfaces with different density of hydrogen adsorption
Liu Feng-Bin,Wang Jia-Dao,Chen Da-Rong,Zhao Ming,He Guang-Ping.The microstructures of the diamond (100) surfaces with different density of hydrogen adsorption[J].Acta Physica Sinica,2010,59(9):6556-6562.
Authors:Liu Feng-Bin  Wang Jia-Dao  Chen Da-Rong  Zhao Ming  He Guang-Ping
Institution:College of Mechanical and Electric Engineering, North China University of Technology, Beijing 100144, China;State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China;State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China;College of Mechanical and Electric Engineering, North China University of Technology, Beijing 100144, China;College of Mechanical and Electric Engineering, North China University of Technology, Beijing 100144, China
Abstract:By means of density functional theory on the basis of generalized gradient approximation, the equilibrium geometries and electronic properties of different hydrogenated diamond (100) surfaces were calculated. The results indicate that in the case of 2×1 reconstruction structure, the relaxation occurs along directions parallel and vertical to the surface. However, the relaxation does not appear in the direction parallel to the surface in the case of 1×1 structure. In addition, for the clean surfaces with C(100)-2×1, C(100)-2×1 ∶0.5H and C(100)-1×1 ∶1.5H structures, empty surface states exist in their band gaps. But with regard to the C(100)-1×1 ∶2H and C(100)-2×1 ∶H surface structures, which are configurations with full hydrogen coverage, the empty surface states shift upwards into the conduction band. With the help of analysis of charge density distribution, the inducing mechanisms of surface states were investigated.
Keywords:hydrogen adsorption  diamond  relaxation  surface state
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