| 拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻 |
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| 引用本文： | 关童,滕静,吴克辉,李永庆.拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中的线性磁阻[J].物理学报,2015,64(7):77201-077201. |
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| 作者姓名： | 关童 滕静 吴克辉 李永庆 |
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| 作者单位： | 中国科学院物理研究所, 北京凝聚态物理国家实验室, 北京 100190 |
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| 基金项目： | 国家自然科学基金(批准号: 91121003, 11374337)、国家重点基础研究发展计划(973计划) (批准号: 2012CB921703)和中国科学院资助的课题. |
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| 摘 要： | 本文报道了拓扑绝缘体(Bi0.5Sb0.5)2Te3薄膜中线性磁阻问题的系统性研究工作. 此体系中, 线性磁阻在很宽的温度和磁场范围内出现: 磁场高达18 T时磁阻仍没有饱和趋势, 并且当温度不高于50 K时, 线性磁阻的大小对温度的变化不敏感. 栅压调控化学势可明显改变线性磁阻的大小. 当化学势接近狄拉克点时, 线性磁阻最为显著. 这些结果说明电荷分布的不均匀性是引起该材料线性磁阻的根源.
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| 关 键 词： | 拓扑绝缘体 薄膜 线性磁阻 |
| 收稿时间： | 2015-01-06 |
Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films |
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| Guan Tong,Teng Jing,Wu Ke-Hui,Li Yong-Qing.Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films[J].Acta Physica Sinica,2015,64(7):77201-077201. |
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| Authors: | Guan Tong Teng Jing Wu Ke-Hui Li Yong-Qing |
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| Institution: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | Linear magnetoresistance (LMR) observed in a topological insulator {(Bi0.5Sb0.5)2Te3} thin film is systematically studied. LMR exists in very large ranges of temperature and magnetic field. It shows no trend toward saturation in the magnetic field of up to 18 T nor temperature dependence. LMR can be changed effectively by tuning the chemical potential through gate voltage. LMR shows a largest value when the chemical potential approaches to the Dirac point. These phenomena indicate that charge inhomogeneity is the origin of the LMR in this material. |
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| Keywords: | topological insulators thin film linear magnetoresistance |
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