| 中子辐照氢气氛生长硅的红外吸收 |
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| 引用本文： | 张玉峰,杜永昌,翁诗甫,孟祥提,张秉忠.中子辐照氢气氛生长硅的红外吸收[J].物理学报,1985,34(7):849-859. |
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| 作者姓名： | 张玉峰 杜永昌 翁诗甫 孟祥提 张秉忠 |
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| 作者单位： | (1)北京大学化学系; (2)北京大学物理系; (3)清华大学核能技术研究所 |
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| 基金项目： | 中国科学院科学基金资助 |
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| 摘 要： | 用傅里叶变换红外吸收光谱技术测量了中子辐照氢气氛生长区熔硅在1800—2300cm-1和400—1200cm-1频段的吸收光谱。给出了较强谱带的退火曲线。与质子注入硅的红外光谱及中子辐照氢气氛生长硅的深能级瞬态谱结果相比较,讨论了相应于一些谱带的硅氢中心的可能结构。
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| 收稿时间： | 4/6/1984 12:00:00 AM |
INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE |
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| ZHANG YU-FENG,DU YONG-CHANG,WENG SHI-FU,MENG XIANG-TI and ZHANG BING-ZHONG.INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE[J].Acta Physica Sinica,1985,34(7):849-859. |
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| Authors: | ZHANG YU-FENG DU YONG-CHANG WENG SHI-FU MENG XIANG-TI and ZHANG BING-ZHONG |
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| Abstract: | Infrared absorption spectra of neutron irradiated FZ-Si grown in hydrogen atmosphere have been measured in wavenumber ranges 1800—300 em-1 and 400—200cm-1 by FTIR. The annealing behaviour of stronger absorption bands has been shown. By comparing with spectral results of proton implanted silicon measured by IR and neutron irradiated FZ-Si grown in hydrogen atmosphere measured by DLTS, the possible constructions of H-related centers are discussed. |
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