用于POF的高性能共振腔发光二极管

提出用AlGaAs材料为n型下DBR，AlGaInP材料为p型上DBR，GaInP/AlGaInP多量子阱为有源区来制备650nm波长的共振腔发光二极管（RCLED）.用传输矩阵法对器件的结构进行了理论设计，并制备了RCLED和普通LED两种结构.测试结果表明，RCLED有更高的发光效率，是普通LED的近1.3倍，当注入电流从3mA增加到30mA时，RCLED的峰值波长只变化了1nm，而普通LED的波长则变化了7nm，且RCLED的光谱半宽窄，远场发散角小. 关键词： 发光二极管 共振腔 金属有机物化学气相淀积

High performance resonant cavity light emitting diodes for POF application

A device structure of resonant cavity light emitting diodes （RCLED） at 650nm wavelength was proposed by using AlGaAs as the n-type bottom DBR, AlGaInP as the p-type top DBR, and GaInP/AlGaInP MQW as the active region. The device was designed according to the transfer matrix method, and both RCLED and normal LED were fabricated for comparison. Results showed that the efficiency of RCLED is 30% higher than the normal LED, and the peak wavelength of RCLED changed only 1nm when the driving current increased from 3mA to 30mA, compared with that of 7nm for the normal LED. Meanwhile, RCLED has a narrower spectrum and a smaller far field divergence angle.