激光干涉结晶法制备一维周期结构的纳米硅阵列

利用激光干涉结晶方法，采用周期为400 nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布，在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明，样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明：1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si:H膜厚度从10nm降至4nm，通过控制激光的能量密度，每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显 关键词： 纳米硅 激光干涉结晶 移相光栅 定域晶化

One-dimensional periodic nanocrystalline silicon arrays made by pulsed laser interference crystallization

One-dimensional periodic nanocrystalline silicon (nc-Si) arrays were fabricated by laser interference crystallization combined with one-dimensional phase shifting grating mask (PSGM). The laser energy density irradiated on the surface of samples with different thicknesses of a-Si:H can be modulated by the PSGM with periodicity of 400 nm. Raman spectra confirmed the crystallization of the irradiated stripe-patterned area of the samples. The transmission electron microscopic and atomic force microscopic images demonstrate that the periodicity of one-dimensional nc-Si arrays is the same as that of the PSGM. And by controlling the laser energy density, a stripe width of 30 nm in each period was obtained as the thickness of a-Si:H decreased from 10 to 4 nm. The high resolution transmission electron microscope images show the clear crystalline lattice of nc-Si within the stripe patterns.