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SiC过渡层对氟化类金刚石薄膜附着特性的影响
引用本文:潘越,赵强,江舸,周杨,江美福,杨亦赏.SiC过渡层对氟化类金刚石薄膜附着特性的影响[J].物理学报,2013,62(1):15209-015209.
作者姓名:潘越  赵强  江舸  周杨  江美福  杨亦赏
作者单位:1. 苏州大学物理科学与技术学院,苏州,215006
2. 四川大学物理科学与技术学院,成都,610065
摘    要:采用射频反应磁控溅射法在316L不锈钢基片上分别沉积了两种薄膜:一种是氟化类金刚石薄膜(F-DLC),另一种是先镀上一定厚度的SiC过渡层再沉积F-DLC.着重研究了薄膜的附着力随过渡层制备条件的变化规律.结果显示,增加SiC过渡层后薄膜的附着力明显增加,且附着力随SiC过渡层的制备条件有所变化,在射频输入功率为200 W,沉积时间5min制备出的SiC过渡层上再沉积F-DLC时,附着力可达8.7 N,远高于未加过渡层时F-DLC膜的附着力(4 N).通过研究SiC的沉积速率曲线、表面形貌和红外光谱,探讨了SiC过渡层及其制备条件影响薄膜附着力的相关机制.

关 键 词:F-DLC  SiC过渡层  红外光谱  附着力
收稿时间:2012-07-07

Influence of SiC intermediate layer on adhesion property of F-DLC film
Pan Yue,Zhao Qiang,Jiang Ge,Zhou Yang,Jiang Mei-Fu,Yang Yi-Shang.Influence of SiC intermediate layer on adhesion property of F-DLC film[J].Acta Physica Sinica,2013,62(1):15209-015209.
Authors:Pan Yue  Zhao Qiang  Jiang Ge  Zhou Yang  Jiang Mei-Fu  Yang Yi-Shang
Institution:1. School of Physical Science and Technology, Suzhou University, Suzhou 215006, China;2. School of Physical Science and Technology, Sichuan University, Chengdu 610065, China
Abstract:Two kinds of films are deposited on 316L stainless steel substrates by radio frequency reactive magnetron sputtering technique. One is fluorinated diamond-like carbon film (F-DLC) deposited on the 316L stainless steel substrate directly and the other is F-DLC with SiC intermediate layer. This paper focuses on the changing regulation of film adhesion with preparation condition. As the result, the adhesion of fluorinated diamond-like carbon film with SiC intermediate layer is obviously much better than that of F-DLC, and the adhesion is dependent on preparation condition of preparation SiC intermediate layer. The adhesion of F-DLC can reach 8.7 N with 200 W RF input power and 5 min deposition time, which is much bigger than the adhesion of F-DLC without intermediate layer (4 N). The mechanism of the preparation condition of SiC influencing the adhesive force of F-DLC is studied by investigating the deposition rate curve, surface morphology and infrared spectrum.
Keywords:F-DLC  SiC intermediate layer  infrared spectrogram  adhesion
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