| 室温生长ZnO薄膜晶体管的紫外响应特性 |
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| 引用本文： | 吴萍,张杰,李喜峰,陈凌翔,汪雷,吕建国.室温生长ZnO薄膜晶体管的紫外响应特性[J].物理学报,2013,62(1):18101-018101. |
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| 作者姓名： | 吴萍 张杰 李喜峰 陈凌翔 汪雷 吕建国 |
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| 作者单位： | 1. 浙江大学材料科学与工程学系,硅材料国家重点实验室,杭州310027
2. 上海大学,新型显示技术及应用集成教育部重点实验室,上海200072 |
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| 基金项目： | 国家自然科学基金(批准号: 51002131)和上海大学新型显示技术及应用集成教育部重点实验室(批准号: P201005)资助的课题. |
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| 摘 要： | 在室温下采用射频磁控溅射法制备了以ZnO薄膜为沟道层的薄膜晶体管(TFTs).研究表明ZnO薄膜在紫外区具有较高的吸收率,并且ZnO-TFTs对紫外光照射较为敏感.因此,进一步深入研究了ZnO-TFTs紫外光照下的输出和转移特性,结果表明,紫外光照将引起较为明显的光响应电流,且经过光照的器件在光源移除7天后,ZnO沟道层中仍能观察到残余电导现象,其原因可以归结为紫外光辐射在ZnO沟道层中引入了一定数量的氧空位施主态缺陷.
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| 关 键 词： | ZnO 薄膜晶体管 紫外响应 残余电导 |
| 收稿时间： | 2012-06-18 |
Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature |
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| Wu Ping,Zhang Jie,Li Xi-Feng,Chen Ling-Xiang,Wang Lei,Lü,Jian-Guo.Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature[J].Acta Physica Sinica,2013,62(1):18101-018101. |
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| Authors: | Wu Ping Zhang Jie Li Xi-Feng Chen Ling-Xiang Wang Lei Lü Jian-Guo |
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| Institution: | 1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;2. Key Laboratory of Advanced Display and System Application, Shanghai University, Shanghai 200072, China |
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| Abstract: | Transparent thin-film transistor (TFT) with ZnO film as a channel layer is fabricated at room temperature. ZnO film has a high absorption in the UV region and ZnO-TFT is sensitive to the UV illumination. We investigate the ultraviolet photoresponse of ZnO-TFT and find that the illumination with 254 nm light results in an evident photoresponse. The residual conductivity is observed in ZnO channel even the UV light was removed one week before. The UV illumination can induce the formation of oxygen vacancy defects which will act as donors in ZnO channel. |
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| Keywords: | ZnO thin film transistors ultraviolet photoresponse residual conductivity |
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