| 应变Si NMOSFET阈值电压集约物理模型 |
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| 引用本文： | 周春宇,张鹤鸣,胡辉勇,庄奕琪,舒斌,王斌,王冠宇.应变Si NMOSFET阈值电压集约物理模型[J].物理学报,2013,62(7):77103-077103. |
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| 作者姓名： | 周春宇 张鹤鸣 胡辉勇 庄奕琪 舒斌 王斌 王冠宇 |
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| 作者单位： | 1. 西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071;2. 辽宁工程技术大学电子与信息工程学院, 葫芦岛 125105 |
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| 基金项目： | 教育部博士点基金 (批准号: JY0300122503)、中央高校基本业务费 (批准号: K5051225014, K5051225004) 和陕西省自然科学基金 (批准号: 2010JQ8008) 资助的课题. |
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| 摘 要： | 本文采用渐变沟道近似和准二维分析的方法, 通过求解泊松方程, 建立了应变Si NMOSFET阈值电压集约物理模型. 模型同时研究了短沟道, 窄沟道, 非均匀掺杂, 漏致势垒降低等物理效应对阈值电压的影响. 采用参数提取软件提取了阈值电压相关参数, 通过将模型的计算结果和实验结果进行对比分析, 验证了本文提出的模型的正确性. 该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考.
关键词：
应变Si NMOSFET
阈值电压
集约物理模型
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| 关 键 词： | 应变Si NMOSFET 阈值电压 集约物理模型 |
| 收稿时间： | 2012-11-04 |
Physical compact modeling for threshold voltage of strained Si NMOSFET |
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| Zhou Chun-Yu,Zhang He-Ming,Hu Hui-Yong,Zhuang Yi-Qi,Su Bin,Wang Bin,Wang Guan-Yu.Physical compact modeling for threshold voltage of strained Si NMOSFET[J].Acta Physica Sinica,2013,62(7):77103-077103. |
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| Authors: | Zhou Chun-Yu Zhang He-Ming Hu Hui-Yong Zhuang Yi-Qi Su Bin Wang Bin Wang Guan-Yu |
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| Institution: | 1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;2. School of Electronic and Information Engineering, Liaoning Technical University, Huludao 125105, China |
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| Abstract: | The development of strained-Si physical compact threshold voltage model is based on Poisson's equation, using the gradual channel approximation (GCA) and coherent quasi-two-dimensional (2D) analysis, as well as taking into account the effects of short channel effect (SCE), narrow channel effect (NCE), non-uniform doping effect, and drain-induced barrier lowering (DIBL) effect. Moreover, the threshold voltage parameters are extracted from the experimental results by software. Finally, the validity of our model is derived from the comparison of our simulation results. The proposed model may be useful for the design and simulation of very large scale integrated circuits (VLSI) made of strained-Si. |
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| Keywords: | strained Si NMOSFET threshold voltage physical compact modeling |
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