脉冲偏压上升沿特性对等离子体浸没离子注入鞘层扩展动力学的影响

等离子体浸没离子注入(PIII)是用于材料表面改性的一种廉价高效、非视线的技术.采用等离子体粒子模型，通过假设电子密度服从Boltzmann分布，求解Poisson方程和Newton方程，跟踪离子在等离子体鞘层中的运动形态及特性并进行统计分析，研究了不同上升速率和形状的6种波形上升沿对鞘层时空演化、离子注入能量和剂量的影响.结果表明，在PIII过程中，脉冲上升沿影响了等离子体鞘层的扩展，且不同波形诱导的鞘层厚度间存在最大差值.电场强度在鞘层的外边缘区域存在陡降区，离子的运动为非匀加速过程.可以通过调整脉冲 关键词： 等离子体浸没离子注入 鞘层 粒子模型 上升沿

Effect of rise-time patterns on dynamics of sheath expansion during plasma immersion ion implantation

Plasma immersion ion implantation (PIII) has been developed as a low_cost and efficient surface modification technique of irregularly-shaped objects. The effect of six pulse waves with different rise_time patterns on the spatio-temporal evolution of plasma sheath, energy and dose of ion implantation has been simulated by particle-in-cell modeling. Statistical results may be obtained through assuming the Boltzmann distribution of electrons, and solving Poisson and Newton equations for tracing each ion in the plasma sheath. The results show that rise_time pattern has a critical influence on the evolution of plasma sheath. There exists maximum thickness difference of plasma sheath for different waveforms. The acceleration of ions is non_uniform due to the non-uniformity of electrical field strength. The maximum gradient of electrical field appears near the edge of plasma sheath. The results also show that optimization of dose and energy of incident ions may be achieved through modification of rise_time pattern. The numerical simulation of sheath expansion can be effectively used to provide a scientific basis for optimizing the PIII process.