| 大功率全方位反射镜发光二极管性能研究 |
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| 引用本文： | 董雅娟,张俊兵,陈海涛,曾祥华.大功率全方位反射镜发光二极管性能研究[J].物理学报,2011,60(7):77803-077803. |
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| 作者姓名： | 董雅娟 张俊兵 陈海涛 曾祥华 |
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| 作者单位： | 扬州大学物理科学与技术学院,扬州 225002 |
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| 基金项目： | 国家自然科学基金(批准号:11004170)和江苏省科技项目(批准号:BG2007026)资助的课题. |
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| 摘 要： | 在现有工艺条件下通过简单工艺实现大功率GaN基多量子阱全方位反射镜(ODR)发光二极管(LED)的研制,并对试制LED样品进行了光学、电学和色参数三个方面性能测试.测试结果发现,ODR芯片比普通芯片的光强提高了244 mcd,极大提高了发光强度;ODR LED光通量、光效、色纯度比普通LED分别提高了6.04%,5.74%,78.64%.ODR LED具有绝对优势是其色温要比普通LED的色温低1804 K,明显改善大功率LED的色温缺陷.
关键词：
发光二极管
ODR
色温
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| 关 键 词： | 发光二极管 ODR 色温 |
| 收稿时间： | 2010-10-02 |
Performance of power omnidirectimal reflector LED |
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| Dong Ya-Juan,Zhang Jun-Bing,Chen Hai-Tao and Zeng Xiang-Hua.Performance of power omnidirectimal reflector LED[J].Acta Physica Sinica,2011,60(7):77803-077803. |
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| Authors: | Dong Ya-Juan Zhang Jun-Bing Chen Hai-Tao and Zeng Xiang-Hua |
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| Institution: | College of Physics & Technology, Yangzhou University, Yangzhou 225002, China;College of Physics & Technology, Yangzhou University, Yangzhou 225002, China;College of Physics & Technology, Yangzhou University, Yangzhou 225002, China;College of Physics & Technology, Yangzhou University, Yangzhou 225002, China |
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| Abstract: | In this paper, GaN-based InGaN/GaN MQW power LEDs are fabricated based on the existing technology through a simple processing, and their optical, electrical, and color properties are tested. Results show that the luminous intensity of the chips with omnidirectional reflector(ODR) has an improvement of 244mcd over that with the ordinary chips, and that the ODR LED's luminous flux, the efficiency and the color purity are improved by 6.04%, 5.74%, 78.64% respectively. One of the advantages of the ODR LED is its low color temperature, which is greatly lower than that of the ordinary LED. |
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| Keywords: | light-emitting diodes ODR color temperature |
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