一种获得GaAs/GaAlAs多量子阱材料带边附近折射率色散关系的方法

本文提供了一种在GaAs/GaAlAs多量子阱(MQW)材料的直接带边附近折射率参数色散关系的获得方法。其特点是在多层介质膜系统中用光学传递矩阵对MQW进行处理的基础上引入室温激子振荡因子,然后对材料的实验反射谱进行拟合。这种色散关系对于光电器件设计及其理论期望来讲是十分重要的。这种方法除能得到折射率实部与虚部的色散关系外,还可得到激子共振吸收谱。 关键词：

A METHOD FOR OBTAINING THE DISPERSION RELATION OF THE REFRACTIVE INDEX NEAR THE BAND-GAP OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS MATERIALS

This paper presents a method for obtaining the dispersion relation of the refractive index near the direct band-gap of GaAs/GaAlAs multiple quantum wells (MQW) materials. Its characteristic is introducing room temperature excitonic oscillating factors into the dielectric coefficients on the basis of dealing MQW with optical transmit matrixes on the system of multi-layer media films, then to fit the curve of experimental reflection spectrum of the sample. This dispersion relation is very important to the design of optoelectronic elements and their theoretical expectations. By this way, we can obtain not only the dispersion relation of the real and imaginary part of the refractive index, but also the resonant excitonic absorption spectrum.