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忆阻电路降维建模与特性分析
引用本文:包伯成,王春丽,武花干,乔晓华.忆阻电路降维建模与特性分析[J].物理学报,2014,63(2):20504-020504.
作者姓名:包伯成  王春丽  武花干  乔晓华
作者单位:1. 常州大学信息科学与工程学院, 常州 213164;2. 南京理工大学电子工程系, 南京 210094;3. 江苏理工学院电气信息工程学院, 常州 213001
基金项目:国家自然科学基金(批准号:51277017)和江苏省自然科学基金(批准号:BK2012583)资助的课题.
摘    要:通过对蔡氏忆阻电路的数学建模分析,提出了忆阻电路动力学建模的降维问题.以包含两个磁控忆阻器的忆阻电路为例,进行了忆阻电路降维建模,由此建立了一个三维系统模型.基于该模型,分析了忆阻电路的平衡点和稳定性,研究了电路参数变化时忆阻电路的动力学特性.进一步,对包含两个磁控忆阻器的忆阻电路常规模型的分析结果和其降维模型的分析结果进行了比较.结果表明:忆阻电路降维模型的维数只与电容器的数量和电感器的数量有关,而与忆阻器的数量无关;当电路参数变化时忆阻电路存在分岔模式共存等非线性现象;降维建模降低了系统建模复杂度,有利于系统的动力学特性分析,但消除了忆阻器内部状态变量的初始条件对忆阻电路动力学特性的影响.

关 键 词:忆阻电路  建模  降维  动力学
收稿时间:2013-07-30

Dimensionality reduction modeling and characteristic analysis of memristive circuit
Bao Bo-Cheng,Wang Chun-Li,Wu Hua-Gan,Qiao Xiao-Hua.Dimensionality reduction modeling and characteristic analysis of memristive circuit[J].Acta Physica Sinica,2014,63(2):20504-020504.
Authors:Bao Bo-Cheng  Wang Chun-Li  Wu Hua-Gan  Qiao Xiao-Hua
Institution:1. School of Information Science and Engineering, Changzhou University, Changzhou 213164, China;2. Department of Electronic Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;3. School of Electrical and Information Engineering, Jiangsu University of Technology, Changzhou 213001, China
Abstract:Through mathematical modeling analysis of Chua’s memristive circuit, the problem of dimensionality reduction for dynamical modeling of memristive circuit is proposed. Taking memristive circuit with two memristors for example, dimensionality reduction modeling of the memristive circuit is performed, on which a three-dimensional system model is established. Based on this model, the equilibrium points and stabilities are analyzed, and the dynamical characteristics, when the parameters are varied, are investigated. Furthermore, the analysis results from the conventional model are compared with the results from the dimensionality reduction model of memristive cicuit with two memristors. The results indicate that the dimensionality of the dimensionality reduction model of memristive circuit is related to the number of capacitors and inductors only, but unrelated to the number of memristors; there exist nonlinear phenomena about the coexistence of bifurcation modes in the memristive circuit when circuit parameters are varied; the dimensionality reduction modeling reduces the complexity of system modeling, which is conducive to dynamical charateristic analysis of the system but eliminates the effect of the initial conditions of the memristors internal state variables on dynamical charateristics of memristive circuit.
Keywords:memristive circuit  modeling  dimensionality reduction  dynamics
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